Электронный каталог

Статья

Utamuradova, Sh.B.
Influence of Palladium Doping and Proton Irradiation on Oxygen Stability and Optical Properties of n-Type Silicon / Sh.B.Utamuradova, D.A.Rakhmanov, P.L.Tuan, A.S.Doroshkevich, I.N.Fadeikina, R.Sh.Isayev. – Text : electronic // Physica B. – 2026. – Vol. 740. – P. 419041. – URL: https://doi.org/10.1016/j.physb.2026.419041. – Bibliogr.: 30.

This study investigates the combined effects of palladium diffusion doping and proton irradiation on oxygen-related defects and optical properties of n-type silicon. Pure and Pd-doped silicon samples were irradiated with 2 MeV protons at fluences of 5 × 10&sup(14) and 1 × 10&sup(15) cm&sup(−2). Infrared spectroscopy identified the formation of Si–O–Si, Si–O, Si–OH, SiO&sub(2), and SiO&sub(3) bonds. Palladium doping enhanced the 1106 cm&sup(−1) absorption band, indicating stabilization of interstitial oxygen in a neutral state. Proton irradiation reduced this band intensity due to the generation of radiation-induced defects, including VO and V&sub(2)O complexes. Ellipsometric measurements revealed increases in optical parameters and effective medium approximation (EMA) layer thickness, especially in Pd-doped samples, suggesting intensified surface oxidation after irradiation. The findings demonstrate that palladium significantly influences oxygen-defect evolution and radiation-induced oxidation processes, contributing to improved resistance of silicon to irradiation-related degradation



Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 37 - Оптика$
ОИЯИ = ОИЯИ (JINR)2026