Электронный каталог

Статья

Utamuradova, Sh.B.
Impedance Spectra of Rhodium-Doped Silicon Irradiated with Alpha Particles / Sh.B.Utamuradova, D.A.Rakhmanov, A.S.Doroshkevich, Zh.V.Mezentseva, R.Sh.Isayev, A.Tatarinova. – Text : electronic // Radiation Physics and Chemistry. – 2026. – Vol. 245. – P. 113893. – URL: https://doi.org/10.1016/j.radphyschem.2026.113893. – Bibliogr.: p. 113893-6.

In this work, the effect of irradiation with α-particles at fluences of 5 × 10&sup(14) and 1 × 10&sup(15) cm&sup(−2) on the electrophysical properties of rhodium-doped n-type silicon is investigated by the method of impedance spectroscopy as a function of the diffusion temperature. It is established that irradiation of undoped n-Si leads to a significant degradation of its electrical characteristics, accompanied by a sharp increase in resistivity due to the formation of radiation-induced defects and deep levels in the forbidden energy gap. It is shown that with increasing irradiation fluence, the resistance of the samples increases by more than four times compared to the initial state. A comparative analysis of the results indicates a substantial influence of both the irradiation dose and the rhodium diffusion temperature on the electrophysical parameters of n-Si. At the same time, rhodium doping significantly reduces the degree of radiation-induced degradation of the material, especially at a diffusion temperature of 1200 &sup(o)C, which indicates its stabilizing effect on the defect structure of silicon.



Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2026