Электронный каталог

Статья

Atanov, N.V.
Study of Gamma Radiation Resistance of GaN Transistor for Signal Amplifiers of Scintillation Electromagnetic Calorimeter Cells / N.V.Atanov, V.Yu.Baranov, Yu.I.Davydov, N.A.Huseynov, M.N.Mirzayev, [a.o.]. – Text : electronic // Journal of Instrumentation. – 2026. – Vol. 21, No. 4. – P. P04047. – URL: https://doi.org/10.1088/1748-0221/21/04/P04047.

Based on an unconventional application of commercially available power GaN transistors, a voltage-sensitive amplifier circuit was proposed for a scintillation sandwich-type lead-plastic calorimeter cell using SiPMs, intended for detectors operating under high-radiation conditions. The radiation hardness of the selected GaN transistors under gamma irradiation was investigated. Defect formation in the transistor structures was studied using C-V characteristics. The results demonstrate that GaN transistors can serve as a promising element base for scintillation detectors operating in high-luminosity accelerator environments.



ОИЯИ = ОИЯИ (JINR)2026
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 344.1ж - Сцинтилляционные счетчики, камеры. Сцинтилляционные вещества. Микроканальные умножители