Электронный каталог

Статья

Barkov, K.A.
Studies of Phase Formation, Electronic Structure, and Electrical Properties of the Ion-Beam Sputtered Cu&sub(x)Si&sub(1-x) (x = 9 – 53 at.%) Films / K.A.Barkov, A.S.Doroshkevich, P.L.Tuan, Zh.V.Mezentseva, [a.o.]. – Text : electronic // Materials Chemistry and Physics. – 2026. – Vol. 358. – P. 132445. – URL: https://doi.org/10.1016/j.matchemphys.2026.132445. – Bibliogr.: 73.

The Cu–Si system is widely used in various branches of technology, and has recently been considered as a promising anode material for lithium-ion batteries. However, even today, there are still questions related to the structure of the Cu&sub(3)Si phase formed at the Cu/Si interfaces and in Cu–Si thin films. To address unrevealed facts and complex phenomenon at Cu–Si interface, the phase composition, the electronic structure and the electrical properties of ion beam sputtered Cu&sub(x)Si&sub(1-x) (x = 9 – 53 at.%) films have been studied. The Cu&sub(x)Si&sub(1-x) films have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultrasoft X-ray emission spectroscopy (USXES), energy-dispersive X-ray spectroscopy (EDX) and Rutherford back-scattering spectrometry (RBS). The experimental results are compared with theoretical DFT calculations, particularly on the electronic structure and formation of *h -Cu&sub(3)Si (P-3m1) and *h′-Cu&sub(3)Si (R-3) phases. The experimental results showed that the Cu&sub(x)Si&sub(1-x) films are composite in nature and contain Cu&sub(3)Si, a-Si and several SiO&sub(x) (SiO&sub(0.47), SiO&sub(0.8), SiO&sub(1.3), SiO&sub(1.7) and SiO&sub(2)) phases. Further, theoretical ultra-soft X-ray emission Si L2.3-spectra confirmed the signature of the nanocrystalline *h -Cu&sub(3)Si (P-3m1) phase formation in Cu&sub(x)Si&sub(1-x) films with an average size of 35 nm. The XPS and USXES methods showed that with an increasing in the atomic content of Cu in Cu&sub(x)Si&sub(1-x) (x = 9 – 53 at.%), the *h-Cu&sub(3)Si phase content in the film increases from 10 to 60% that also leads to the conversion of silicon suboxide into silicon dioxide (SiO&sub(x) – SiO&sub(2), «x » varies from 0.47 to 2). With an increase in the Cu&sub(3)Si content, there is a tendency to decrease the resistivity from 4.3 × 10&sup(−2) to 5.9 × 10&sup(−4) Ohm⋅cm.



Спец.(статьи,препринты) = С 344.4б - Методы приготовления тонких пленок$
Спец.(статьи,препринты) = С 332.8 - Синхротронное излучение. Лазеры на свободных электронах. Получение и использование рентгеновских лучей
ОИЯИ = ОИЯИ (JINR)2026