Электронный каталог

Статья

Samadov, S.
Study of Germanium Sulfide thin Films by Doppler Broadening Spectroscopy / S.Samadov, A.Sidorin, N.V.M.Trung, A.S.Abiyev, [a.o.]. – Text : electronic // Indian Journal of Physics. – 2025. – Vol. 99, No. 13. – P. 5009-5014. – URL: https://doi.org/10.1007/s12648-025-03713-x. – Bibliogr.: 35.

The defect states of thin films of the GeS compound were investigated. Thin films with thicknesses of d = 250, 500, and 750 nm were obtained using the thermal evaporation method. The Doppler Broadening Spectroscopy (DBS) method was employed to study the defects. It was determined that the nature of the defects remains consistent regardless of the thickness of the thin films and that they are vacancy-type defects. Furthermore, it was identified that for thin films with a thickness of d = 500 nm, the S parameter reaches its maximum value, indicating the highest concentration of defects. This process corresponds to the completion of phase formation in GeS thin films with a thickness of d = 750 nm.



ОИЯИ = ОИЯИ (JINR)2025
Спец.(статьи,препринты) = С 344.4б - Методы приготовления тонких пленок$
Спец.(статьи,препринты) = С 350 - Приложения методов ядерной физики в смежных областях