Электронный каталог

Статья

Utamuradova, Sh.B.
Studying the Influence of Proton Irradiation on the Distribution Profile of Pt and Cr in Surface Layers n-Si < Pt >, n-Si < Cr > Using Ellipsometric Spectroscopy / Sh.B.Utamuradova, P.L.Tuan, A.S.Doroshkevich, R.Sh.Isayev, [a.o.] // Advanced Physical Research [Electronic resource]. – 2024. – Vol. 6, No. 2. – P. 83-89. – URL: https://doi.org/10.62476/apr62.83. – Bibliogr.: p. 88-89.

In this work, the effect of high-temperature doping and proton irradiation on the depth profile and the creation of layers on the surface of single-crystal silicon was studied. The study used singlecrystal n-type silicon samples doped with phosphorus during growth. These samples were first doped with platinum and chromium and after polishing they were irradiated with protons with an energy of 2 MeV, a dose of 5.1 × 10*1*4 cm&sup(–2) at the EG-5 accelerator. Studies of the optical properties of the sample surface were carried out using an ELLIPS-1991 spectroscopic ellipsometer at room temperature.



ОИЯИ = ОИЯИ (JINR)2024
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 350 - Приложения методов ядерной физики в смежных областях
Бюллетени = 49/024