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Электронный каталог: Li, K. - Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
Li, K. - Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
Статья
Автор: Li, K.
IEEE Transactions on Nuclear Science: Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
б.г.
ISBN отсутствует
Автор: Li, K.
IEEE Transactions on Nuclear Science: Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
б.г.
ISBN отсутствует
Статья
Li, K.
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs / K.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.5, Pt.1. – p.740-747. – URL: https://doi.org/10.1109/TNS.2021.3065563. – Bibliogr.:42.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Li, K.
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs / K.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.5, Pt.1. – p.740-747. – URL: https://doi.org/10.1109/TNS.2021.3065563. – Bibliogr.:42.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$