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Электронный каталог: Ball, D. R. - Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and...
Ball, D. R. - Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and...
Статья
Автор: Ball, D. R.
IEEE Transactions on Nuclear Science: Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and...
б.г.
ISBN отсутствует
Автор: Ball, D. R.
IEEE Transactions on Nuclear Science: Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and...
б.г.
ISBN отсутствует
Статья
Ball, D.R.
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes / D.R.Ball, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.1, Pt.1. – p.22-28. – URL: https://doi.org/10.1109/TNS.2019.2955922. – Bibliogr.:24.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Ball, D.R.
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes / D.R.Ball, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.1, Pt.1. – p.22-28. – URL: https://doi.org/10.1109/TNS.2019.2955922. – Bibliogr.:24.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$