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Электронный каталог: Wang, Q. - TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Tran...
Wang, Q. - TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Tran...
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Статья
Автор: Wang, Q.
IEEE Transactions on Nuclear Science: TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Tran...
б.г.
ISBN отсутствует
Автор: Wang, Q.
IEEE Transactions on Nuclear Science: TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Tran...
б.г.
ISBN отсутствует
Статья
Wang, Q.
TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors / Q.Wang, [et al.] // IEEE Transactions on Nuclear Science. – 2018. – Vol.65, No.8, Pt.3. – p.2250-2259. – URL: https://doi.org/10.1109/TNS.2018.2851366. – Bibliogr.:42.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Wang, Q.
TCAD Simulation of Single-Event-Transient Effects in L-Shaped Channel Tunneling Field-Effect Transistors / Q.Wang, [et al.] // IEEE Transactions on Nuclear Science. – 2018. – Vol.65, No.8, Pt.3. – p.2250-2259. – URL: https://doi.org/10.1109/TNS.2018.2851366. – Bibliogr.:42.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$