Электронный каталог -Zheng, Q. - The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

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Автор: Zheng, Q.
IEEE Transactions on Nuclear Science: The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
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Zheng, Q.
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose / Q.Zheng, [et al.] // IEEE Transactions on Nuclear Science. – 2018. – Vol.65, No.8, Pt.1. – p.1920-1927. – URL: https://doi.org/10.1109/TNS.2018.2816583. – Bibliogr.:26.

Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$

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Электронный каталог: Zheng, Q. - The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

Zheng, Q. - The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

Электронный каталог

Поиск :

Личный кабинет :

Электронный каталог: Zheng, Q. - The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

Zheng, Q. - The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose

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