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Электронный каталог: Taggart, J. L. - Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
Taggart, J. L. - Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
Статья
Автор: Taggart, J. L.
IEEE Transactions on Nuclear Science: Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
б.г.
ISBN отсутствует
Автор: Taggart, J. L.
IEEE Transactions on Nuclear Science: Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects
б.г.
ISBN отсутствует
Статья
Taggart, J.L.
Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects / J.L.Taggart, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.8, Pt.1. – p.2300-2306. – URL: https://doi.org/10.1109/TNS.2017.2666147. – Bibliogr.:30.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Taggart, J.L.
Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects / J.L.Taggart, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.8, Pt.1. – p.2300-2306. – URL: https://doi.org/10.1109/TNS.2017.2666147. – Bibliogr.:30.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$