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Электронный каталог: Liu, C. - Radiation Defects Studies on Silicon Bipolar Junction Transistor Irradiated by Br Ions and Electrons
Liu, C. - Radiation Defects Studies on Silicon Bipolar Junction Transistor Irradiated by Br Ions and Electrons
Статья
Автор: Liu, C.
Nuclear Instruments & Methods in Physics Research B: Radiation Defects Studies on Silicon Bipolar Junction Transistor Irradiated by Br Ions and Electrons
б.г.
ISBN отсутствует
Автор: Liu, C.
Nuclear Instruments & Methods in Physics Research B: Radiation Defects Studies on Silicon Bipolar Junction Transistor Irradiated by Br Ions and Electrons
б.г.
ISBN отсутствует
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Статья
Liu, C.
Radiation Defects Studies on Silicon Bipolar Junction Transistor Irradiated by Br Ions and Electrons / C.Liu, [et al.] // Nuclear Instruments & Methods in Physics Research B. – 2015. – Vol.365, Pt.A. – p.244-246. – URL: http://dx.doi.org/10.1016/j.nimb.2015.08.025. – Bibliogr.:7.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Liu, C.
Radiation Defects Studies on Silicon Bipolar Junction Transistor Irradiated by Br Ions and Electrons / C.Liu, [et al.] // Nuclear Instruments & Methods in Physics Research B. – 2015. – Vol.365, Pt.A. – p.244-246. – URL: http://dx.doi.org/10.1016/j.nimb.2015.08.025. – Bibliogr.:7.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
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Nuclear Instruments & Methods in Physics Research B Vol.365, Pt.A
2015 г.
ISBN отсутствует
Библиотека : ЦБ.ЧЗ
Nuclear Instruments & Methods in Physics Research B Vol.365, Pt.A
2015 г.
ISBN отсутствует
Библиотека : ЦБ.ЧЗ