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Электронный каталог: Li, X. - Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based ...
Li, X. - Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based ...
Статья
Автор: Li, X.
IEEE Transactions on Nuclear Science: Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based ...
б.г.
ISBN отсутствует
Автор: Li, X.
IEEE Transactions on Nuclear Science: Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based ...
б.г.
ISBN отсутствует
Статья
Li, X.
Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy / X.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2015. – Vol.62, No.2. – p.555-564. – URL: http://dx.doi.org/10.1109/TNS.2015.2408331. – Bibliogr.:38.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Li, X.
Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy / X.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2015. – Vol.62, No.2. – p.555-564. – URL: http://dx.doi.org/10.1109/TNS.2015.2408331. – Bibliogr.:38.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$