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Электронный каталог: Fourches, N. T. - Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects
Fourches, N. T. - Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects
Статья
Автор: Fourches, N. T.
IEEE Transactions on Nuclear Science: Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects
б.г.
ISBN отсутствует
Автор: Fourches, N. T.
IEEE Transactions on Nuclear Science: Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects
б.г.
ISBN отсутствует
Статья
Fourches, N.T.
Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects / N.T.Fourches // IEEE Transactions on Nuclear Science. – 2009. – Vol.56,No.6, Pt.2. – p.3743-3751. – URL: http://dx.doi.org/10.1109/TNS.2009.2031540. – Bibliogr.:37.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Fourches, N.T.
Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects / N.T.Fourches // IEEE Transactions on Nuclear Science. – 2009. – Vol.56,No.6, Pt.2. – p.3743-3751. – URL: http://dx.doi.org/10.1109/TNS.2009.2031540. – Bibliogr.:37.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$