Электронный каталог

Статья

Hoa, B.T.
Investigations of Depth Profile of Native Oxide Layers Covering GaAs Implanted with Noble Gas by Rutherford Backscattering Spectroscopy with Nuclear Reaction / B.T.Hoa, M.Kulik, A.S.Doroshkevich, N.T.Bao My, T.T.Phuong, N.T.T.Trang, P.M.Duc, P.L.Tuan // Физика элементарных частиц и атомного ядра. Письма. – 2026. – Т. 23, № 5. – P. 507. – URL: https://www1.jinr.ru/Pepan_letters/panl_2026_5/41_Hoa_ann.pdf.

The samples employed in the investigation were semi-insulating GaAs wafers. Noble gas has been implanted using the UNIMAS ion implanter at energy 100 keV, fluence of 3 · 10&sup(15) cm&sup(−2). Rutherford backscattering spectroscopy with nuclear reaction analysis (RBS/NR) method was used to determine the thickness and atomic composition of elements in the samples. The nuclear reaction &sup(16)O(*a, a) &sup(16)O exhibits elastic resonance at an energy of about 3.05 MeV. This resonance provides a useful method for expanding RBS techniques to investigate the concentration of oxygen present on sample surfaces. The RBS/NR approach’s conclusion indicates that the surface of GaAs samples contains an oxygen-enriched layer. It has also been shown that the thickness of native oxide layer is influenced by the type of ion.



ОИЯИ = ОИЯИ (JINR)2026