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Электронный каталог: Samadov, S. F. - Effect of Zn and Fe Doping on Vacancy Cluster Formation in Cu–In–Se System
Samadov, S. F. - Effect of Zn and Fe Doping on Vacancy Cluster Formation in Cu–In–Se System
Статья
Автор: Samadov, S. F.
Micro and Nanostructures: Effect of Zn and Fe Doping on Vacancy Cluster Formation in Cu–In–Se System
б.г.
ISBN отсутствует
Автор: Samadov, S. F.
Micro and Nanostructures: Effect of Zn and Fe Doping on Vacancy Cluster Formation in Cu–In–Se System
б.г.
ISBN отсутствует
На полку
Статья
Samadov, S.F.
Effect of Zn and Fe Doping on Vacancy Cluster Formation in Cu–In–Se System / S.F.Samadov, N.V.M.Trung, A.A.Sidorin, O.S.Orlov, [a.o.]. – Text : electronic // Micro and Nanostructures. – 2026. – Vol. 209. – P. 208451. – URL: https://doi.org/10.1016/j.micrna.2025.208451. – Bibliogr.: 38.
Polycrystalline CuIn&sub(4)Se&sub(7), CuInZnSe&sub(3), and CuInFe&sub(2)Se&sub(5) chalcogenide semiconductors were synthesized by a solid-state reaction and systematically studied using positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation spectroscopy (DBAS). Depth-resolved S–W analysis revealed distinct dopant-dependent defect distributions: Zn incorporation led to a higher concentration of small, homogeneously distributed vacancies, while Fe doping enhanced positron trapping through increased d–p hybridization and promoted the aggregation of fewer but larger vacancy clusters. PALS measurements identified two dominant lifetime components (*t&sub(1) = 265–274 ps, *t&sub(2) = 372–401 ps), with Zn-doped samples showing intermediate behavior between undoped CuIn&sub(4)Se&sub(7) and Fe-doped CuInFe&sub(2)Se&sub(5). Electron momentum distribution (EMD) spectra further confirmed that Zn favors annihilation with s–p type electrons, whereas Fe increases the contribution of d-orbital electrons, broadening the central momentum peak. The direct correlation between PALS and EMD results establishes that the cation d-orbital configuration governs both the geometric size and the electronic character of vacancy-type defects. These insights provide a fundamental framework for defect engineering in Cu–In–Se chalcogenides, where Zn doping may be advantageous for photovoltaic applications requiring minimized recombination, while Fe doping could enhance thermoelectric performance via phonon scattering from larger vacancy clusters.
Спец.(статьи,препринты) = С 36 - Физика твердого тела$
Спец.(статьи,препринты) = С 350 - Приложения методов ядерной физики в смежных областях
ОИЯИ = ОИЯИ (JINR)2026
Samadov, S.F.
Effect of Zn and Fe Doping on Vacancy Cluster Formation in Cu–In–Se System / S.F.Samadov, N.V.M.Trung, A.A.Sidorin, O.S.Orlov, [a.o.]. – Text : electronic // Micro and Nanostructures. – 2026. – Vol. 209. – P. 208451. – URL: https://doi.org/10.1016/j.micrna.2025.208451. – Bibliogr.: 38.
Polycrystalline CuIn&sub(4)Se&sub(7), CuInZnSe&sub(3), and CuInFe&sub(2)Se&sub(5) chalcogenide semiconductors were synthesized by a solid-state reaction and systematically studied using positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation spectroscopy (DBAS). Depth-resolved S–W analysis revealed distinct dopant-dependent defect distributions: Zn incorporation led to a higher concentration of small, homogeneously distributed vacancies, while Fe doping enhanced positron trapping through increased d–p hybridization and promoted the aggregation of fewer but larger vacancy clusters. PALS measurements identified two dominant lifetime components (*t&sub(1) = 265–274 ps, *t&sub(2) = 372–401 ps), with Zn-doped samples showing intermediate behavior between undoped CuIn&sub(4)Se&sub(7) and Fe-doped CuInFe&sub(2)Se&sub(5). Electron momentum distribution (EMD) spectra further confirmed that Zn favors annihilation with s–p type electrons, whereas Fe increases the contribution of d-orbital electrons, broadening the central momentum peak. The direct correlation between PALS and EMD results establishes that the cation d-orbital configuration governs both the geometric size and the electronic character of vacancy-type defects. These insights provide a fundamental framework for defect engineering in Cu–In–Se chalcogenides, where Zn doping may be advantageous for photovoltaic applications requiring minimized recombination, while Fe doping could enhance thermoelectric performance via phonon scattering from larger vacancy clusters.
Спец.(статьи,препринты) = С 36 - Физика твердого тела$
Спец.(статьи,препринты) = С 350 - Приложения методов ядерной физики в смежных областях
ОИЯИ = ОИЯИ (JINR)2026
