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Электронный каталог: Samadov, S. F. - Effect of Gamma Irradiation and Thermal Annealing on Defect Formation in ZrB&sub(2) Nanocrystals
Samadov, S. F. - Effect of Gamma Irradiation and Thermal Annealing on Defect Formation in ZrB&sub(2) Nanocrystals

Статья
Автор: Samadov, S. F.
Physica B: Effect of Gamma Irradiation and Thermal Annealing on Defect Formation in ZrB&sub(2) Nanocrystals
б.г.
ISBN отсутствует
Автор: Samadov, S. F.
Physica B: Effect of Gamma Irradiation and Thermal Annealing on Defect Formation in ZrB&sub(2) Nanocrystals
б.г.
ISBN отсутствует
Статья
Samadov, S.F.
Effect of Gamma Irradiation and Thermal Annealing on Defect Formation in ZrB&sub(2) Nanocrystals / S.F.Samadov, O.A.Samedov, D.M.Mirzayeva, H.H.A.Nguyen, M.N.Mirzayev. – Text : electronic // Physica B. – 2025. – Vol. 717. – P. 417807. – URL: https://doi.org/10.1016/j.physb.2025.417807. – Bibliogr.: 49.
The study investigated the microstructural changes and defect formation for ZrB&sub(2) nanocrystalline sample (grain size: 43 nm) under the effect of irradiation and combined effects of irradiation and thermal annealing. The sample was irradiated using a &sup(60)Co gamma-ray source at a dose rate of 6.05 Gy/h, with total absorbed dose of 1500 and 3000 kGy. Raman spectroscopic analysis showed that the degree of amorphization increases up to 1.2 % for the sample irradiated with absorption dose 3000 kGy, while a 0.2 % decrease was observed after thermal treatment at 1173 K. moreover the broadening of Raman peaks and the decrease in intensity after thermal treatment confirm the persistence of defect states in the crystalline structure. Doppler Broadening Positron Annihilation Spectroscopy (DBPAS) results revealed that the S parameter increased within the range of 3.1–3.6 %, while the W parameter decreased within the range of 2.8–2.4 %. The variation of the S and W components indicates the formation of free-volume defects, as well as Zr and B vacancies in the crystal structure ZrB&sub(2) nanocrystalline sample. Ab initio calculations based on the two-component density functional theory (TCDFT) showed the formation of 1V&sub(Zr), 2V&sub(Zr)+1V&sub(B), and 3V&sub(Zr)+2V&sub(B) vacancy complexes. In the electron momentum density (EMD) spectra, characteristic intensity variations were detected in the range of 0.0–4.0 × 10&sup(− 3) m&sub(0)c. After combined effect of irradiation and thermal treatment, the highly defective EMD features demonstrate that the recombination of defect centers significantly decreases. The research results show that in ZrB&sub(2) material irradiated at a high absorbed dose, complex vacancy-type defects are formed, and depending on the selected temperature interval, effective recombination of defects occurs. All these findings suggest that nanocrystalline ZrB&sub(2) is a promising material for future applications as a radiation-resistant ceramic.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
ОИЯИ = ОИЯИ (JINR)2025
Samadov, S.F.
Effect of Gamma Irradiation and Thermal Annealing on Defect Formation in ZrB&sub(2) Nanocrystals / S.F.Samadov, O.A.Samedov, D.M.Mirzayeva, H.H.A.Nguyen, M.N.Mirzayev. – Text : electronic // Physica B. – 2025. – Vol. 717. – P. 417807. – URL: https://doi.org/10.1016/j.physb.2025.417807. – Bibliogr.: 49.
The study investigated the microstructural changes and defect formation for ZrB&sub(2) nanocrystalline sample (grain size: 43 nm) under the effect of irradiation and combined effects of irradiation and thermal annealing. The sample was irradiated using a &sup(60)Co gamma-ray source at a dose rate of 6.05 Gy/h, with total absorbed dose of 1500 and 3000 kGy. Raman spectroscopic analysis showed that the degree of amorphization increases up to 1.2 % for the sample irradiated with absorption dose 3000 kGy, while a 0.2 % decrease was observed after thermal treatment at 1173 K. moreover the broadening of Raman peaks and the decrease in intensity after thermal treatment confirm the persistence of defect states in the crystalline structure. Doppler Broadening Positron Annihilation Spectroscopy (DBPAS) results revealed that the S parameter increased within the range of 3.1–3.6 %, while the W parameter decreased within the range of 2.8–2.4 %. The variation of the S and W components indicates the formation of free-volume defects, as well as Zr and B vacancies in the crystal structure ZrB&sub(2) nanocrystalline sample. Ab initio calculations based on the two-component density functional theory (TCDFT) showed the formation of 1V&sub(Zr), 2V&sub(Zr)+1V&sub(B), and 3V&sub(Zr)+2V&sub(B) vacancy complexes. In the electron momentum density (EMD) spectra, characteristic intensity variations were detected in the range of 0.0–4.0 × 10&sup(− 3) m&sub(0)c. After combined effect of irradiation and thermal treatment, the highly defective EMD features demonstrate that the recombination of defect centers significantly decreases. The research results show that in ZrB&sub(2) material irradiated at a high absorbed dose, complex vacancy-type defects are formed, and depending on the selected temperature interval, effective recombination of defects occurs. All these findings suggest that nanocrystalline ZrB&sub(2) is a promising material for future applications as a radiation-resistant ceramic.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
ОИЯИ = ОИЯИ (JINR)2025
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