Электронный каталог

Статья

Gloginjic, M.
EBS/C Impurity and Damage Profiling of 4 MeV C Implanted MgF&sub(2) Single Crystal / M.Gloginjic, N.Kirilkin, V.Skuratov, [a.o.]. – Text : electronic // Materials Science in Semiconductor Processing. – 2025. – Vol. 199. – P. 109865. – URL: https://doi.org/10.1016/j.mssp.2025.109865. – Bibliogr.: 35.

Magnesium fluoride has exceptional optical properties and is widely used in the production of optical components such as anti-reflective coatings, optical windows, lenses, prisms and planar waveguides. In particular cases, the production of optical components requires modification of the material's optical properties. Specifically, planar waveguides could be produced by refractive index modulation using ion implantation technique, as a consequence of damage/impurity introduction in the crystal structure during the ion implantation process. In this work, the damage and impurity depth profiles induced by 4 MeV C implantation in MgF&sub(2) single crystal were investigated. Ion implantation was performed in MgF2 (001) crystal orientation. The damage and impurity profiling were achieved by Elastic Backscattering Spectrometry/Channeling technique (EBS/C). EBS/C spectra were analyzed by in-house developed phenomenological Channeling SIMulation (CSIM) code. It was shown that CSIM obtained damage depth profiles poses gradual changing nature, suitable for refractive index modulation making ion implantation and corresponding EBS/C analysis complementary for production and control of magnesium fluoride planar waveguides.



Спец.(статьи,препринты) = С 37 - Оптика$
Спец.(статьи,препринты) = С 342 - Прохождение частиц и гамма-квантов через вещество
ОИЯИ = ОИЯИ (JINR)2025