Электронный каталог

Статья

Ntshobeni, G.
Surface and structural changes in SiC pre-implanted with helium, silver, and strontium after annealing, and their effect on silver and strontium migration : Text : electronic / G.Ntshobeni, A.Sohatsky, T.Nguyen, V.A.Skuratov, [a.o.] // Ceramics International. – 2025. – Vol. 51, No. 25, Pt. C. – URL: https://doi.org/10.1016/j.ceramint.2025.07.393. – Bibliogr.: 42.

The effect of helium (He), silver (Ag) and strontium (Sr) ions implantation and annealing on the surface and structural properties of SiC as well as the migration of Ag and Sr was investigated in this study. Ag and Sr were sequentially implanted at 360 keV and 280 keV, respectively, each to a fluence of 2 × 10&sup(16) cm&sup(−2) at 600 &sup(o)C. Some dual implanted (Ag + Sr-SiC) samples were additionally implanted with He of 17 keV to a 1 × 10&sup(17) cm&sup(−2) at 350 &sup(o)C, forming triple-implanted samples (Ag + Sr + He-SiC). Both dual and triple implanted samples underwent isochronal annealing at 1100, 1200, and 1300 &sup(o)C for 5 h. Ag, Sr and He implantation introduced defects in both dual and triple implanted samples. However, triple-implanted samples developed surface blisters and holes due to the migration of He bubbles. At 1100 &sup(o)C, partial recovery of structural damage was observed in both dual- and triple-implanted samples, but graphite formed in the latter, and holes persisted. At higher temperatures (i.e., 1200 and 1300 &sup(o)C), dual-implanted samples showed significant structural recovery, whereas the graphite in triple-implanted samples impeded the healing of defects. Depth profiling revealed minimal changes in Ag and Sr distributions and concentrations in dual-implanted samples post-annealing up to 1300 &sup(o)C. However, tripleimplanted samples lost ~20 % of Ag and Sr at 1100 &sup(o)C due to sublimation via holes. At 1200 and 1300 &sup(o)C, no further losses occurred, but Ag and Sr migrated toward the surface. These findings suggest that He implantation promotes the formation of holes in SiC, facilitating the loss of Ag and Sr at 1100 &sup(o)C. Additionally, Heinduced defects enhance the migration of Ag and Sr toward the surface during annealing at 1200 and 1300 &sup(o)C.



Спец.(статьи,препринты) = С 413 г - Химические эффекты ядерных превращений. Химические формы стабилизации продуктов ядерных реакций. Радиационная химия
ОИЯИ = ОИЯИ (JINR)2025
Бюллетени = 46/025