Электронный каталог

Статья

Vasil'evskii, I.S.
Real-Time Technique for Semiconductor Material Parameter Measurement Under Continuous Neutron Irradiation with High Integral Fluence / I.S.Vasil'evskii, A.Yskakov, M.V.Bulavin, A.V.Galushko, A.Bekbayev, B.Mukhametuly, E.Myrzabekova, A.Nurkasova, [a.o.]. – Text : electronic // Electronics. – 2025. – Vol. 14, No. 19. – P. 3802. – URL: https://doi.org/10.3390/electronics14193802. – Bibliogr.: 49.

The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of the electrical parameters of semiconductor structures during neutron irradiation in a high-flux reactor environment. A specially designed irradiation fixture with an electrical measurement system was developed and implemented at the WWR-K research reactor. The system enables simultaneous measurement of electrical conductivity and the Hall effect, with automatic temperature control and remote data acquisition. The sealed fixture, equipped with radiation-resistant wiring and a temperature control, allows for continuous measurement of remote material properties at neutron fluences exceeding 1018 cm−2, eliminating the limitations associated with post-irradiation handling of radioactive samples. The technique was successfully applied to the two different InGaAs-based heterostructures, revealing distinct mechanisms of radiation-induced modification: degradation of mobility and carrier concentration in the InGaAs quantum well structure on GaAs substrate, and transmutation-induced doping effects in the heterostructure on InP substrate. The developed methodology provides a reliable platform for evaluating radiation resistance and optimizing materials for magnetic sensors and electronic components designed for high-radiation environments.



ОИЯИ = ОИЯИ (JINR)2025