Электронный каталог

Статья

Ibrayeva, A.
Annealing of Irradiation Defects in Si&sub(3)N&sub(4): TEM Examination / A.Ibrayeva, J.O'Connell, A.J.Van Vuuren, V.Skuratov. – Text: electronic // Eurasian Journal of Physics and Functional Materials. – 2025. – Vol. 9, No. 1. – P. 16-20. – URL: https://doi.org/10.69912/2616-8537.1237. – Bibliogr.: 22.

The article presents the first results of the study of structural and morphological features of swift (220 MeV) xenon ion induced defects in polycrystalline Si&sub(3)N&sub(4) during post-irradiation heat treatment. The approximate temperature range of ion track region recrystallization is defined as 300 - 800 °C, at 800 °C complete structural relaxation was observed in the in-situ and ex-situ modes. It was found that the track recovery process, as expected, depends on the grain size and thickness of the sample. For complete recrystallization in both studied modes, a short annealing time was required due to the nature of the initial defects (before heating).



ОИЯИ = ОИЯИ (JINR)2025
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Бюллетени = 22/025