Электронный каталог

Статья

Polyakov, A.Y.
Proton Damage Effects in Double Polymorph *g/*b-Ga&sub(2)O&sub(3) Diodes / A.Y.Polyakov, A.S.Doroshkevich, R.Sh.Isaev, [a.o.] // Journal of Materials Chemistry C [Electronic resource]. – 2024. – Vol. 12, No. 3. – P. 1020-1029. – URL: https://pubs.rsc.org/en/content/articlelanding/2024/tc/d3tc04171a.

Double polymorph *g/*b-Ga&sub(2)O&sub(3) structures remain crystalline upon unprecedentedly high crystal disorder levels where other semiconductors lose their long-range symmetry and, eventually, become amorphous. However, it is unclear if this radiation tolerance translates to device-like operation, where much lower levels of damage degrade the performance. In this work, we fabricated conducting double polymorph γ/β-Ga&sub(2)O&sub(3) structures using ion implantation and subsequent hydrogenation of the top γ-Ga&sub(2)O&sub(3) layer, instead of conventional impurity doping which is limited by γ-Ga&sub(2)O&sub(3) stability tradeoffs. While not a direct comparison, these structures exhibited much higher radiation tolerance compared to conventional Schottky diodes made of β-Ga&sub(2)O&sub(3). Specifically, using 1.1 MeV proton irradiation at fluences of 10*1*4–10*1*5 cm&sup(−2), conventional β-Ga&sub(2)O&sub(3) diodes became unfunctional, while double polymorph γ/β-Ga&sub(2)O&sub(3) diodes remained operational. The centers supplying electrons in γ-Ga&sub(2)O&sub(3) were characterized by prominent DX-like persistent photocapacitance. For samples implanted with Ga+ and Si+ to produce the β → γ transition, annealed at 600°C and plasma hydrogenated, the net donor concentration was ∼10*1*2 cm&sup(−3), with dominant electron traps near E&sub(C) − 0.65–0.7 eV and photocapacitance and photocurrent spectra determined by deep acceptors with optical ionization thresholds 1.3 eV, 2 eV, 2.3 eV and 2.8 eV. Irradiation with 1 MeV protons increased the net donor density of these conducting γ/β-Ga2O3 structures, with carrier creation rates of (1.5–4.4) × 10&sup(−2) cm&sup(−2), in sharp contrast to the carrier removal rates of 150–200 cm&sup(−1) under identical conditions in the original β-Ga&sub(2)O&sub(3) films.



ОИЯИ = ОИЯИ (JINR)2024
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Бюллетени = 32/024