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Электронный каталог: Mabelane, T. S. - Effect of 710 MeV Bi*+*5*1 Swift Heavy Ions Irradiation on Se Pre-Implanted Polycrystalline SiC
Mabelane, T. S. - Effect of 710 MeV Bi*+*5*1 Swift Heavy Ions Irradiation on Se Pre-Implanted Polycrystalline SiC
Статья
Автор: Mabelane, T. S.
Vacuum [Electronic resource]: Effect of 710 MeV Bi*+*5*1 Swift Heavy Ions Irradiation on Se Pre-Implanted Polycrystalline SiC
б.г.
ISBN отсутствует
Автор: Mabelane, T. S.
Vacuum [Electronic resource]: Effect of 710 MeV Bi*+*5*1 Swift Heavy Ions Irradiation on Se Pre-Implanted Polycrystalline SiC
б.г.
ISBN отсутствует
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Статья
Mabelane, T.S.
Effect of 710 MeV Bi*+*5*1 Swift Heavy Ions Irradiation on Se Pre-Implanted Polycrystalline SiC / T.S.Mabelane, V.A.Skuratov, [et al.] // Vacuum [Electronic resource]. – 2024. – Vol. 224. – P. 113189. – URL: https://doi.org/10.1016/j.vacuum.2024.113189. – Bibliogr.: 33.
In this study, the effect of swift heavy ions (SHIs) irradiation in the recrystallization of polycrystalline SiC pre-implanted with selenium (Se) ions and migration of Se was investigated. The main objective of this study is to investigate the role of SHIs with the maximum electronic energy loss greater than 20 keV/nm on structural evolution of initially amorphized pre-implanted SiC and the migration of pre-implanted fission products (FPs). The pristine SiC samples were first implanted with 200 keV Se ions to a fluence of 1 × 10*1*6 cm*-*2 at room temperature (RT) and at 350 &sup(o)C. Some of the pre-implanted samples were then irradiated with bismuth (Bi) ions of 710 MeV to a fluence of 1 × 10*1*3 cm*-*2 at RT. The characterization of both the implanted and implanted then irradiated SiC was conducted using techniques such as transmission electron microscopy (TEM), Raman spectroscopy, scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). At RT, Se ions implantation caused the amorphization of SiC to a depth of about 187 nm beneath the surface. In contrast, when implanted at 350°C, the SiC retained its crystalline structure with some defects (i.e., point defects, point defect clusters and some dislocation loops). The SHIs irradiation of the RT implanted SiC resulted in the reduction of the amorphous layer thickness from 187 nm to around 178 nm and led to the formation of nanocrystalline SiC in the amorphous layer. Irradiation of the SiC implanted at 350&sup(o)C induced some crystallization of defects. Notably, no evidence of Se ions migration was observed in both the irradiated RT-implanted and the hot-implanted SiC.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2024
Бюллетени = 33/024
Mabelane, T.S.
Effect of 710 MeV Bi*+*5*1 Swift Heavy Ions Irradiation on Se Pre-Implanted Polycrystalline SiC / T.S.Mabelane, V.A.Skuratov, [et al.] // Vacuum [Electronic resource]. – 2024. – Vol. 224. – P. 113189. – URL: https://doi.org/10.1016/j.vacuum.2024.113189. – Bibliogr.: 33.
In this study, the effect of swift heavy ions (SHIs) irradiation in the recrystallization of polycrystalline SiC pre-implanted with selenium (Se) ions and migration of Se was investigated. The main objective of this study is to investigate the role of SHIs with the maximum electronic energy loss greater than 20 keV/nm on structural evolution of initially amorphized pre-implanted SiC and the migration of pre-implanted fission products (FPs). The pristine SiC samples were first implanted with 200 keV Se ions to a fluence of 1 × 10*1*6 cm*-*2 at room temperature (RT) and at 350 &sup(o)C. Some of the pre-implanted samples were then irradiated with bismuth (Bi) ions of 710 MeV to a fluence of 1 × 10*1*3 cm*-*2 at RT. The characterization of both the implanted and implanted then irradiated SiC was conducted using techniques such as transmission electron microscopy (TEM), Raman spectroscopy, scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). At RT, Se ions implantation caused the amorphization of SiC to a depth of about 187 nm beneath the surface. In contrast, when implanted at 350°C, the SiC retained its crystalline structure with some defects (i.e., point defects, point defect clusters and some dislocation loops). The SHIs irradiation of the RT implanted SiC resulted in the reduction of the amorphous layer thickness from 187 nm to around 178 nm and led to the formation of nanocrystalline SiC in the amorphous layer. Irradiation of the SiC implanted at 350&sup(o)C induced some crystallization of defects. Notably, no evidence of Se ions migration was observed in both the irradiated RT-implanted and the hot-implanted SiC.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2024
Бюллетени = 33/024
