Электронный каталог

Статья

Polyakov, A.Y.
Carrier Removal Rates in 1.1 MeV Proton Irradiated *a-Ga&sub(2)O&sub(3)(Sn) / A.Y.Polyakov, A.S.Doroshkevich, R.Sh.Isaev, [a.o.] // Journal of Physics D [Electronic resource]. – 2023. – Vol.56, No.30. – P.305103. – URL: https://doi.org/10.1088/1361-6463/acd06b. – Bibliogr.:40.

Films of α-Ga&sub(2)O&sub(3) (Sn) grown by halide vapor phase epitaxy on sapphire with donor densities in the range 5 × 10*1*5–8.4 × 10*1*9 cm&sup(−3) were irradiated at 25 °C with 1.1 MeV protons to fluences from 10*1*3 to 10*1*6 cm&sup(−2). For the lowest doped samples, the carrier removal rate was ∼35 cm&sup(−1) at 10*1*4 cm&sup(−2) and ∼1.3 cm&sup(−1) for 10*1*5 cm&sup(−2) proton fluence. The observed removal rate could be accounted for by introduction of deep acceptors with optical ionization energies of 2 eV, 2.8 eV and 3.1 eV. For samples doped at 4 × 10*1*8 cm&sup(−3), the initial electron removal rate was 5 × 10*3 cm&sup(−1) for 10*1*5 cm&sup(−2) fluence and ∼300 cm&sup(−1) for 10*1*6 cm&sup(−2) fluence. The same deep acceptors were observed in photocapacitance spectra, but their introduction rate was orders of magnitude lower than the carrier removal rate. For the heaviest doped samples, the electron removal rate was close to that for the 4 × 1018 cm&sup(−3) sample. The radiation tolerance of lightly doped α-Ga&sub(2)O&sub(3) is higher than for similarly doped β-Ga&sub(2)O&sub(3) layers.



ОИЯИ = ОИЯИ (JINR)2023
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 344.4б - Методы приготовления тонких пленок$
Бюллетени = 7/024