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Электронный каталог: Bonaldo, S. - TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh...
Bonaldo, S. - TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh...
Статья
Автор: Bonaldo, S.
IEEE Transactions on Nuclear Science: TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh...
б.г.
ISBN отсутствует
Автор: Bonaldo, S.
IEEE Transactions on Nuclear Science: TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh...
б.г.
ISBN отсутствует
Статья
Bonaldo, S.
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses / S.Bonaldo, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.7, Pt.1. – P.1444-1452. – URL: https://doi.org/10.1109/TNS.2022.3142385. – Bibliogr.:53.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Bonaldo, S.
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses / S.Bonaldo, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.7, Pt.1. – P.1444-1452. – URL: https://doi.org/10.1109/TNS.2022.3142385. – Bibliogr.:53.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$