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Электронный каталог: Yaqing, C. - Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMs
Yaqing, C. - Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMs
Статья
Автор: Yaqing, C.
IEEE Transactions on Nuclear Science: Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMs
б.г.
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Автор: Yaqing, C.
IEEE Transactions on Nuclear Science: Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMs
б.г.
ISBN отсутствует
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Статья
Yaqing, C.
Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMs / C.Yaqing, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.5. – P.1176-1181. – URL: https://doi.org/10.1109/TNS.2021.3127567. – Bibliogr.:38.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Yaqing, C.
Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-nm Bulk FinFET SRAMs / C.Yaqing, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.5. – P.1176-1181. – URL: https://doi.org/10.1109/TNS.2021.3127567. – Bibliogr.:38.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
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