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Электронный каталог: Wan, P. - The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experim...
Wan, P. - The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experim...
Статья
Автор: Wan, P.
IEEE Transactions on Nuclear Science: The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experim...
б.г.
ISBN отсутствует
Автор: Wan, P.
IEEE Transactions on Nuclear Science: The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experim...
б.г.
ISBN отсутствует
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Статья
Wan, P.
The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method / P.Wan, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.5. – P.1120-1126. – URL: https://doi.org/10.1109/TNS.2022.3144495. – Bibliogr.:40.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Wan, P.
The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method / P.Wan, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.5. – P.1120-1126. – URL: https://doi.org/10.1109/TNS.2022.3144495. – Bibliogr.:40.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
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