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Электронный каталог: Peng, C. - Influence of Drain Bias and Flux on Heavy Ion-Induced Leakage Currents in SiC Power MOSFETs
Peng, C. - Influence of Drain Bias and Flux on Heavy Ion-Induced Leakage Currents in SiC Power MOSFETs
Статья
Автор: Peng, C.
IEEE Transactions on Nuclear Science: Influence of Drain Bias and Flux on Heavy Ion-Induced Leakage Currents in SiC Power MOSFETs
б.г.
ISBN отсутствует
Автор: Peng, C.
IEEE Transactions on Nuclear Science: Influence of Drain Bias and Flux on Heavy Ion-Induced Leakage Currents in SiC Power MOSFETs
б.г.
ISBN отсутствует
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Статья
Peng, C.
Influence of Drain Bias and Flux on Heavy Ion-Induced Leakage Currents in SiC Power MOSFETs / C.Peng, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.5. – P.1037-1043. – URL: https://doi.org/10.1109/TNS.2022.3166521. – Bibliogr.:36.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Peng, C.
Influence of Drain Bias and Flux on Heavy Ion-Induced Leakage Currents in SiC Power MOSFETs / C.Peng, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.5. – P.1037-1043. – URL: https://doi.org/10.1109/TNS.2022.3166521. – Bibliogr.:36.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
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