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Электронный каталог: Liu, C. - Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs
Liu, C. - Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs
Статья
Автор: Liu, C.
IEEE Transactions on Nuclear Science: Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs
б.г.
ISBN отсутствует
Автор: Liu, C.
IEEE Transactions on Nuclear Science: Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs
б.г.
ISBN отсутствует
Статья
Liu, C.
Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs / C.Liu, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.11. – p.2609-2615. – URL: https://doi.org/10.1109/TNS.2021.3115116. – Bibliogr.:23.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Liu, C.
Investigation of Radiation Hardening by Back-Channel Adjustment in PDSOI MOSFETs / C.Liu, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.11. – p.2609-2615. – URL: https://doi.org/10.1109/TNS.2021.3115116. – Bibliogr.:23.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$