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Электронный каталог: Gao, R.-L. - Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He ...
Gao, R.-L. - Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He ...
Статья
Автор: Gao, R.-L.
IEEE Transactions on Nuclear Science: Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He ...
б.г.
ISBN отсутствует
Автор: Gao, R.-L.
IEEE Transactions on Nuclear Science: Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He ...
б.г.
ISBN отсутствует
Статья
Gao, R.-L.
Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He Ion Irradiation / R.-L.Gao, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.5, Pt.2. – p.1169-1174. – URL: https://doi.org/10.1109/TNS.2021.3069568. – Bibliogr.:32.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
Gao, R.-L.
Systematic Analysis of Reliability of Large-Area 4H-SiC Charged Particle Detector Under Harsh He Ion Irradiation / R.-L.Gao, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.5, Pt.2. – p.1169-1174. – URL: https://doi.org/10.1109/TNS.2021.3069568. – Bibliogr.:32.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы