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Электронный каталог: Li, L. - Modeling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation
Li, L. - Modeling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation
Статья
Автор: Li, L.
IEEE Transactions on Nuclear Science: Modeling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation
б.г.
ISBN отсутствует
Автор: Li, L.
IEEE Transactions on Nuclear Science: Modeling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation
б.г.
ISBN отсутствует
Статья
Li, L.
Modeling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation / L.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.8, Pt.3. – p.2220-2231. – URL: https://doi.org/10.1109/TNS.2021.3094402. – Bibliogr.:31.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Li, L.
Modeling the Ionization Damage on Excess Base Current in p-n-p BJTs for Circuit-Level Simulation / L.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.8, Pt.3. – p.2220-2231. – URL: https://doi.org/10.1109/TNS.2021.3094402. – Bibliogr.:31.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$