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Электронный каталог: Wan, P. - Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions
Wan, P. - Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions
Статья
Автор: Wan, P.
IEEE Transactions on Nuclear Science: Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions
б.г.
ISBN отсутствует
Автор: Wan, P.
IEEE Transactions on Nuclear Science: Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions
б.г.
ISBN отсутствует
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Статья
Wan, P.
Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions / P.Wan, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.6. – p.1265-1271. – URL: https://doi.org/10.1109/TNS.2021.3074391. – Bibliogr.:48.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Wan, P.
Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions / P.Wan, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.6. – p.1265-1271. – URL: https://doi.org/10.1109/TNS.2021.3074391. – Bibliogr.:48.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
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