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Электронный каталог: Dong, P. - Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors
Dong, P. - Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors
Статья
Автор: Dong, P.
IEEE Transactions on Nuclear Science: Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors
б.г.
ISBN отсутствует
Автор: Dong, P.
IEEE Transactions on Nuclear Science: Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors
б.г.
ISBN отсутствует
Статья
Dong, P.
Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors / P.Dong, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.3. – p.312-317. – URL: https://doi.org/10.1109/TNS.2021.3056662. – Bibliogr.:44.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Dong, P.
Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors / P.Dong, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.3. – p.312-317. – URL: https://doi.org/10.1109/TNS.2021.3056662. – Bibliogr.:44.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$