Электронный каталог

Статья

Chen, Z.
Hydrogen-Related Recovery Effect of AlGaN/GaN High-Electron-Mobility Transistors Irradiated by High-Fluence Protons / Z.Chen, [et al.] // IEEE Transactions on Nuclear Science. – 2021. – Vol.68, No.2. – p.118-123. – URL: https://doi.org/10.1109/TNS.2021.3051972. – Bibliogr.:32.



Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$