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Электронный каталог: Fan, Y. Y. - Radiation Hardness of the Low Gain Avalanche Diodes Developed by NDL and IHEP in China
Fan, Y. Y. - Radiation Hardness of the Low Gain Avalanche Diodes Developed by NDL and IHEP in China
Статья
Автор: Fan, Y. Y.
Nuclear Instruments & Methods in Physics Research A [Electronic resource]: Radiation Hardness of the Low Gain Avalanche Diodes Developed by NDL and IHEP in China
б.г.
ISBN отсутствует
Автор: Fan, Y. Y.
Nuclear Instruments & Methods in Physics Research A [Electronic resource]: Radiation Hardness of the Low Gain Avalanche Diodes Developed by NDL and IHEP in China
б.г.
ISBN отсутствует
Статья
Fan, Y.Y.
Radiation Hardness of the Low Gain Avalanche Diodes Developed by NDL and IHEP in China / Y.Y.Fan, N.Atanov, Y.Davydov, [et al.] // Nuclear Instruments & Methods in Physics Research A [Electronic resource]. – 2020. – Vol.984. – p.164608. – URL: https://doi.org/10.1016/j.nima.2020.164608. – Bibliogr.:14.
Спец.(статьи,препринты) = С 344.1с1 - Ливневые спектрометры полного поглощения. Адронные калориметры
ОИЯИ = ОИЯИ (JINR)2020
Fan, Y.Y.
Radiation Hardness of the Low Gain Avalanche Diodes Developed by NDL and IHEP in China / Y.Y.Fan, N.Atanov, Y.Davydov, [et al.] // Nuclear Instruments & Methods in Physics Research A [Electronic resource]. – 2020. – Vol.984. – p.164608. – URL: https://doi.org/10.1016/j.nima.2020.164608. – Bibliogr.:14.
Спец.(статьи,препринты) = С 344.1с1 - Ливневые спектрометры полного поглощения. Адронные калориметры
ОИЯИ = ОИЯИ (JINR)2020