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Электронный каталог: Bessia, F. A. - Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Rad...
Bessia, F. A. - Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Rad...
Статья
Автор: Bessia, F. A.
IEEE Transactions on Nuclear Science: Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Rad...
б.г.
ISBN отсутствует
Автор: Bessia, F. A.
IEEE Transactions on Nuclear Science: Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Rad...
б.г.
ISBN отсутствует
Статья
Bessia, F.A.
Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application / F.A.Bessia, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.10. – p.2217-2223. – URL: https://doi.org/10.1109/TNS.2019.2945040. – Bibliogr.:36.
Спец.(статьи,препринты) = С 349 б - Дозиметрическая и радиометрическая аппаратура
Bessia, F.A.
Ultralow Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application / F.A.Bessia, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.10. – p.2217-2223. – URL: https://doi.org/10.1109/TNS.2019.2945040. – Bibliogr.:36.
Спец.(статьи,препринты) = С 349 б - Дозиметрическая и радиометрическая аппаратура