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Электронный каталог: Li, L. - Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs
Li, L. - Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs
Статья
Автор: Li, L.
IEEE Transactions on Nuclear Science: Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs
б.г.
ISBN отсутствует
Автор: Li, L.
IEEE Transactions on Nuclear Science: Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs
б.г.
ISBN отсутствует
Статья
Li, L.
Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs / L.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.8. – p.1826-1834. – URL: https://doi.org/10.1109/TNS.2020.3004710. – Bibliogr.:27.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Li, L.
Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs / L.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.8. – p.1826-1834. – URL: https://doi.org/10.1109/TNS.2020.3004710. – Bibliogr.:27.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$