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Электронный каталог: Shu, L. - TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS
Shu, L. - TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS
Статья
Автор: Shu, L.
IEEE Transactions on Nuclear Science: TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS
б.г.
ISBN отсутствует
Автор: Shu, L.
IEEE Transactions on Nuclear Science: TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS
б.г.
ISBN отсутствует
Статья
Shu, L.
TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS / L.Shu, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.6, Pt.2. – p.1133-1138. – URL: https://doi.org/10.1109/TNS.2020.2970102. – Bibliogr.:23.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Shu, L.
TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS / L.Shu, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.6, Pt.2. – p.1133-1138. – URL: https://doi.org/10.1109/TNS.2020.2970102. – Bibliogr.:23.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$