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Электронный каталог: Johnson, III, R. A. - Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power D...
Johnson, III, R. A. - Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power D...
Статья
Автор: Johnson, III, R. A.
IEEE Transactions on Nuclear Science: Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power D...
б.г.
ISBN отсутствует
Автор: Johnson, III, R. A.
IEEE Transactions on Nuclear Science: Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power D...
б.г.
ISBN отсутствует
Статья
Johnson, III, R.A.
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes / R.A.Johnson, III, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.1, Pt.1. – p.135-139. – URL: https://doi.org/10.1109/TNS.2019.2947866. – Bibliogr.:20.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Johnson, III, R.A.
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes / R.A.Johnson, III, [et al.] // IEEE Transactions on Nuclear Science. – 2020. – Vol.67, No.1, Pt.1. – p.135-139. – URL: https://doi.org/10.1109/TNS.2019.2947866. – Bibliogr.:20.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$