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Электронный каталог: Privezentsev, V. V. - Defect Structure and Properties of Zn Diffusion Doped Si after Swift Xe Ion Irradiation
Privezentsev, V. V. - Defect Structure and Properties of Zn Diffusion Doped Si after Swift Xe Ion Irradiation
Статья
Автор: Privezentsev, V. V.
Journal of Physics: Conference Series [Electronic resource]: Defect Structure and Properties of Zn Diffusion Doped Si after Swift Xe Ion Irradiation
б.г.
ISBN отсутствует
Автор: Privezentsev, V. V.
Journal of Physics: Conference Series [Electronic resource]: Defect Structure and Properties of Zn Diffusion Doped Si after Swift Xe Ion Irradiation
б.г.
ISBN отсутствует
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Статья
Privezentsev, V.V.
Defect Structure and Properties of Zn Diffusion Doped Si after Swift Xe Ion Irradiation / V.V.Privezentsev, V.A.Skuratov, V.S.Kulikauskas, [et al.] // Journal of Physics: Conference Series [Electronic resource]. – 2019. – Vol.1190. – p.012011. – URL: https://doi.org/10.1088/1742-6596/1190/1/012011. – Bibliogr.:11.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2019
Privezentsev, V.V.
Defect Structure and Properties of Zn Diffusion Doped Si after Swift Xe Ion Irradiation / V.V.Privezentsev, V.A.Skuratov, V.S.Kulikauskas, [et al.] // Journal of Physics: Conference Series [Electronic resource]. – 2019. – Vol.1190. – p.012011. – URL: https://doi.org/10.1088/1742-6596/1190/1/012011. – Bibliogr.:11.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2019
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