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Электронный каталог: Xue, W. - First Principles Study of Semihydrogenated Graphene and Topological Insulator Heterojunction
Xue, W. - First Principles Study of Semihydrogenated Graphene and Topological Insulator Heterojunction
Статья
Автор: Xue, W.
Journal of Physics: Condensed Matter: First Principles Study of Semihydrogenated Graphene and Topological Insulator Heterojunction
б.г.
ISBN отсутствует
Автор: Xue, W.
Journal of Physics: Condensed Matter: First Principles Study of Semihydrogenated Graphene and Topological Insulator Heterojunction
б.г.
ISBN отсутствует
Статья
Xue, W.
First Principles Study of Semihydrogenated Graphene and Topological Insulator Heterojunction / W.Xue, [et al.] // Journal of Physics: Condensed Matter. – 2019. – Vol.31, No.36. – p.365002. – URL: http://dx.doi.org/10.1088/1361-648X/ab228a. – Bibliogr.:39.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры
Xue, W.
First Principles Study of Semihydrogenated Graphene and Topological Insulator Heterojunction / W.Xue, [et al.] // Journal of Physics: Condensed Matter. – 2019. – Vol.31, No.36. – p.365002. – URL: http://dx.doi.org/10.1088/1361-648X/ab228a. – Bibliogr.:39.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры