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Электронный каталог: Johnson, III, R. A. - Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption...
Johnson, III, R. A. - Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption...
Статья
Автор: Johnson, III, R. A.
IEEE Transactions on Nuclear Science: Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption...
б.г.
ISBN отсутствует
Автор: Johnson, III, R. A.
IEEE Transactions on Nuclear Science: Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption...
б.г.
ISBN отсутствует
Статья
Johnson, III, R.A.
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments / R.A.Johnson, III, [et al.] // IEEE Transactions on Nuclear Science. – 2019. – Vol.66, No.7, Pt.2. – p.1694-1701. – URL: https://doi.org/10.1109/TNS.2019.2922883. – Bibliogr.:22.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Johnson, III, R.A.
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments / R.A.Johnson, III, [et al.] // IEEE Transactions on Nuclear Science. – 2019. – Vol.66, No.7, Pt.2. – p.1694-1701. – URL: https://doi.org/10.1109/TNS.2019.2922883. – Bibliogr.:22.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$