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Электронный каталог: Belloir, J.-M. - Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Photodiode Implant Dose
Belloir, J.-M. - Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Photodiode Implant Dose
Статья
Автор: Belloir, J.-M.
IEEE Transactions on Nuclear Science: Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Photodiode Implant Dose
б.г.
ISBN отсутствует
Автор: Belloir, J.-M.
IEEE Transactions on Nuclear Science: Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Photodiode Implant Dose
б.г.
ISBN отсутствует
Статья
Belloir, J.-M.
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Photodiode Implant Dose / J.-M.Belloir, [et al.] // IEEE Transactions on Nuclear Science. – 2019. – Vol.66, No.7, Pt.2. – p.1671-1681. – URL: https://doi.org/10.1109/TNS.2019.2922659. – Bibliogr.:18.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Belloir, J.-M.
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Variation of Photodiode Implant Dose / J.-M.Belloir, [et al.] // IEEE Transactions on Nuclear Science. – 2019. – Vol.66, No.7, Pt.2. – p.1671-1681. – URL: https://doi.org/10.1109/TNS.2019.2922659. – Bibliogr.:18.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$