Электронный каталог -Caron, P. - Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices- Absopac

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Автор: Caron, P.
IEEE Transactions on Nuclear Science: Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices
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Caron, P.
Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices / P.Caron, [et al.] // IEEE Transactions on Nuclear Science. – 2019. – Vol.66, No.7, Pt.2. – p.1404-1409. – URL: https://doi.org/10.1109/TNS.2019.2902758. – Bibliogr.:23.

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Электронный каталог: Caron, P. - Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

Caron, P. - Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

Электронный каталог

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Электронный каталог: Caron, P. - Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

Caron, P. - Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

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