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Электронный каталог: Mandic, I. - Charge-Collection Properties of Irradiated Depleted CMOS Pixel Test Structures
Mandic, I. - Charge-Collection Properties of Irradiated Depleted CMOS Pixel Test Structures
Статья
Автор: Mandic, I.
Nuclear Instruments & Methods in Physics Research A: Charge-Collection Properties of Irradiated Depleted CMOS Pixel Test Structures
б.г.
ISBN отсутствует
Автор: Mandic, I.
Nuclear Instruments & Methods in Physics Research A: Charge-Collection Properties of Irradiated Depleted CMOS Pixel Test Structures
б.г.
ISBN отсутствует
Статья
Mandic, I.
Charge-Collection Properties of Irradiated Depleted CMOS Pixel Test Structures / I.Mandic, [et al.] // Nuclear Instruments & Methods in Physics Research A. – 2018. – Vol.903. – p.126-133. – URL: http://dx.doi.org/10.1016/j.nima.2018.06.062. – Bibliogr.:36.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
Mandic, I.
Charge-Collection Properties of Irradiated Depleted CMOS Pixel Test Structures / I.Mandic, [et al.] // Nuclear Instruments & Methods in Physics Research A. – 2018. – Vol.903. – p.126-133. – URL: http://dx.doi.org/10.1016/j.nima.2018.06.062. – Bibliogr.:36.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы