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Электронный каталог: Huang, H. - Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian D...
Huang, H. - Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian D...
Статья
Автор: Huang, H.
IEEE Transactions on Nuclear Science: Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian D...
б.г.
ISBN отсутствует
Автор: Huang, H.
IEEE Transactions on Nuclear Science: Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian D...
б.г.
ISBN отсутствует
Статья
Huang, H.
Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile / H.Huang, [et al.] // IEEE Transactions on Nuclear Science. – 2018. – Vol.65, No.10. – p.2679-2690. – URL: https://doi.org/10.1109/TNS.2018.2864977. – Bibliogr.:31.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Huang, H.
Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile / H.Huang, [et al.] // IEEE Transactions on Nuclear Science. – 2018. – Vol.65, No.10. – p.2679-2690. – URL: https://doi.org/10.1109/TNS.2018.2864977. – Bibliogr.:31.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$