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Электронный каталог: Yang, L. - Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs with ON-State Bias Irradiation
Yang, L. - Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs with ON-State Bias Irradiation
Статья
Автор: Yang, L.
IEEE Transactions on Nuclear Science: Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs with ON-State Bias Irradiation
б.г.
ISBN отсутствует
Автор: Yang, L.
IEEE Transactions on Nuclear Science: Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs with ON-State Bias Irradiation
б.г.
ISBN отсутствует
Статья
Yang, L.
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs with ON-State Bias Irradiation / L.Yang, [et al.] // IEEE Transactions on Nuclear Science. – 2018. – Vol.65, No.8, Pt.1. – p.1503-1510. – URL: https://doi.org/10.1109/TNS.2018.2827675. – Bibliogr.:23.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Yang, L.
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs with ON-State Bias Irradiation / L.Yang, [et al.] // IEEE Transactions on Nuclear Science. – 2018. – Vol.65, No.8, Pt.1. – p.1503-1510. – URL: https://doi.org/10.1109/TNS.2018.2827675. – Bibliogr.:23.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$