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Электронный каталог: Ieshkin, A. E. - The Quantitative Analysis of Silicon Carbide Surface Smoothing by Ar and Xe Cluster Ions
Ieshkin, A. E. - The Quantitative Analysis of Silicon Carbide Surface Smoothing by Ar and Xe Cluster Ions
Статья
Автор: Ieshkin, A. E.
Nuclear Instruments & Methods in Physics Research B: The Quantitative Analysis of Silicon Carbide Surface Smoothing by Ar and Xe Cluster Ions
б.г.
ISBN отсутствует
Автор: Ieshkin, A. E.
Nuclear Instruments & Methods in Physics Research B: The Quantitative Analysis of Silicon Carbide Surface Smoothing by Ar and Xe Cluster Ions
б.г.
ISBN отсутствует
Статья
Ieshkin, A.E.
The Quantitative Analysis of Silicon Carbide Surface Smoothing by Ar and Xe Cluster Ions / A.E.Ieshkin, [et al.] // Nuclear Instruments & Methods in Physics Research B. – 2018. – Vol.421. – p.27-31. – URL: http://dx.doi.org/10.1016/j.nimb.2018.02.019. – Bibliogr.:17.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Ieshkin, A.E.
The Quantitative Analysis of Silicon Carbide Surface Smoothing by Ar and Xe Cluster Ions / A.E.Ieshkin, [et al.] // Nuclear Instruments & Methods in Physics Research B. – 2018. – Vol.421. – p.27-31. – URL: http://dx.doi.org/10.1016/j.nimb.2018.02.019. – Bibliogr.:17.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$