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Электронный каталог: Peng, L. - Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
Peng, L. - Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
Статья
Автор: Peng, L.
IEEE Transactions on Nuclear Science: Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
б.г.
ISBN отсутствует
Автор: Peng, L.
IEEE Transactions on Nuclear Science: Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
б.г.
ISBN отсутствует
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Статья
Peng, L.
Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress / L.Peng, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.10. – p.2633-2638. – URL: https://doi.org/10.1109/TNS.2017.2744679. – Bibliogr.:28.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Peng, L.
Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress / L.Peng, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.10. – p.2633-2638. – URL: https://doi.org/10.1109/TNS.2017.2744679. – Bibliogr.:28.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
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