Поиск :
Личный кабинет :
Электронный каталог: Fretwurst, E. - The Influence of Edge Effects on the Determination of the Doping Profile of Silicon Pad Diodes
Fretwurst, E. - The Influence of Edge Effects on the Determination of the Doping Profile of Silicon Pad Diodes
Статья
Автор: Fretwurst, E.
Nuclear Instruments & Methods in Physics Research A: The Influence of Edge Effects on the Determination of the Doping Profile of Silicon Pad Diodes
б.г.
ISBN отсутствует
Автор: Fretwurst, E.
Nuclear Instruments & Methods in Physics Research A: The Influence of Edge Effects on the Determination of the Doping Profile of Silicon Pad Diodes
б.г.
ISBN отсутствует
Статья
Fretwurst, E.
The Influence of Edge Effects on the Determination of the Doping Profile of Silicon Pad Diodes / E.Fretwurst, [et al.] // Nuclear Instruments & Methods in Physics Research A. – 2017. – Vol.867. – p.231-236. – URL: http://dx.doi.org/10.1016/j.nima.2017.04.020. – Bibliogr.:18.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
Fretwurst, E.
The Influence of Edge Effects on the Determination of the Doping Profile of Silicon Pad Diodes / E.Fretwurst, [et al.] // Nuclear Instruments & Methods in Physics Research A. – 2017. – Vol.867. – p.231-236. – URL: http://dx.doi.org/10.1016/j.nima.2017.04.020. – Bibliogr.:18.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы